IRF9612 DATU LAPA,CIKLU,FUNKCIJAS
IRF9612 Datasheet PDF
| Ražotājs | Packing | Apraksts | Temperatūra | |
|---|---|---|---|---|
| TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB | Min°C | Max°C |
- Samsung semiconductor IRF9130
P-CHANNEL POWER MOSFETS - Seme IRF9130SMD
P-CHANNEL POWER MOSFET HI.REL APPLICATIONS - Seme IRF9130SMD05
P-CHANNEL POWER MOSFET HI-REL APPLICATIONS - Samsung semiconductor IRF9131
P-CHANNEL POWER MOSFETS - Samsung semiconductor IRF9132
P-CHANNEL POWER MOSFETS - SAMSUNG[Samsung semiconductor] IRF9133
P-CHANNEL POWER MOSFETS - Seme IRF9140
P-CHANNEL POWER MOSFET - IRF9140SM
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 14A I(D) | LLCC - Samsung semiconductor IRF9141
P-CHANNEL POWER MOSFETS - Samsung semiconductor IRF9142
P-CHANNEL POWER MOSFETS - Samsung semiconductor IRF9143
P-CHANNEL POWER MOSFETS - Intersil Corporation IRF9150
-25A, -100V, 0.150 P-Channel Power MOSFET - IRF9151
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-204AA - International Rectifier IRF9230
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) - Intersil Corporation IRF9231
-5.5A -6.5A, -150V -200V, P-Channel Power MOSFETs