2SA512 DATU LAPA,CIKLU,FUNKCIJAS
2SA512 Datasheet PDF
| Ražotājs | Packing | Apraksts | Temperatūra | |
|---|---|---|---|---|
| Toshiba Semiconductor | SILICON EPITAXIAL TYPE |
2SA512 PDF | Min°C | Max°C |
- Toshiba 2SA500
(2SAxxx) Transistors - 2SA503
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 600MA I(C) | TO-39 - 2SA504
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-39 - Toshiba Semiconductor 2SA505
SILICON EPITAXIAL TYPE(PCT PROCESS) - Toshiba 2SA509
(2SAxxx) Transistors - 2SA509GTM
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | TO-92 - 2SA509TM
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | TO-92 - 2SA510
SILICON EPITAXIAL TYPE - Toshiba Semiconductor 2SA512
SILICON EPITAXIAL TYPE - 2SA52
- Micro Electronics 2SA532
Medium Power Amplifiers Switches - 2SA537
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | TO-5 - 2SA537B
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | TO-92 - 2SA537C
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | TO-92 - 2SA539
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