HN1C03F07 DATU LAPA,CIKLU,FUNKCIJAS
HN1C03F07 Datasheet PDF
| Ražotājs | Packing | Apraksts | Temperatūra | |
|---|---|---|---|---|
| Toshiba Semiconductor | Silicon Epitaxial Type Process) Muting Switching Applications |
HN1C03F07 PDF | Min°C | Max°C |
- Toshiba Semiconductor HN1C03F
EPITAXIAL TYPE MUTING SWITCHING APPLICATIONS) - Toshiba Semiconductor HN1C03F07
Silicon Epitaxial Type Process) Muting Switching Applications - HN1C03FA
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP - HN1C03FB
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP - Toshiba Semiconductor HN1C03FU
EPITAXIAL TYPE MUTING SWITCHING APPLICATIONS) - HN1C03FUA
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP - HN1C03FUB
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP - Toshiba Semiconductor HN1C03F_07
Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications