K4E160412D-F DATU LAPA,CIKLU,FUNKCIJAS
K4E160412D-F Datasheet PDF
| Ražotājs | Packing | Apraksts | Temperatūra | |
|---|---|---|---|---|
| Samsung | TSOP-II | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
K4E160412D-F PDF | Min°C | Max°C |
- Samsung semiconductor K4E160411D
4Bit CMOS Dynamic with Extended Data - Samsung K4E160411D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung K4E160411D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung semiconductor K4E160412D
4Bit CMOS Dynamic with Extended Data - Samsung K4E160412D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - Samsung K4E160412D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.